By Rik Brydson
The e-book is anxious with the speculation, history, and sensible use of transmission electron microscopes with lens correctors that could right the results of round aberration. The booklet additionally covers a comparability with aberration correction within the TEM and purposes of analytical aberration corrected STEM in fabrics technology and biology. This publication is vital for microscopists interested by nanoscale and fabrics microanalysis specifically these utilizing scanning transmission electron microscopy, and similar analytical options akin to electron diffraction x-ray spectrometry (EDXS) and electron strength loss spectroscopy (EELS).
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Extra info for Aberration-corrected Analytical Electron Microscopy
Beam damage of the specimen can occur by two dominant mechanisms – knock-on damage in which an atom or ion is displaced from its normal site, and ionisation damage (in some contexts called radiolysis) in which electrons are perturbed leading to chemical and then possibly structural changes. Both mechanisms are discussed by Williams and Carter (2009) and also Egerton et al. (2004), who give a chart showing the ranges of primary beam energy which are likely to cause displacement damage for specific atomic species.
Such an ambitious programme has not yet been carried out in practice, for a variety of reasons. But it is instructive to think of the amount of information required. In a particle of size 30 nm, there are typically a million atoms. 1%. The total information required is a minimum of 1016 bits, say 1 Tbyte. Even if the problems of mechanical stability and radiation damage in the microscope could be overcome, the problem of handling the data is formidable, requiring processing speeds and random access memories perhaps a hundred times greater than those now routinely available.
The ideal specimen must be thin enough that: • it can be treated as a weak phase object (see below); • electron beam spreading within the specimen is negligible; • (if a nano-particle) it can be supported on a thin substrate with the total thickness still small enough to satisfy the two constraints listed above; GENERAL INTRODUCTION-TRANSMISSION ELECTRON MICROSCOPY 15 . . e. low noise or high enough signal to noise ratio) images or spectra. These requirements imply that, for most materials to be imaged or analysed at atomic-column resolution, the appropriate thickness will lie in the range up to 50 nm.
Aberration-corrected Analytical Electron Microscopy by Rik Brydson